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AO3402-23HKT


AO3402
N-Channel MOSFET

General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS= 4.5V) RDS(ON) (at VGS= 2.5V) 30V 4A < 55m? < 70m? < 110m?

SOT23 Top View Bottom View D

D

G S

S

G

Absolute Maximum Ratings TA=25° unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25° C C TA=70° VGS ID IDM PD TJ, TSTG

Maximum 30 ±12 4 3.4 15 1.4 1 -55 to 150

Units V V A

W ° C

Symbol
t ≤ 10s Steady-State Steady-State

RθJA RθJL

Typ 70 100 63

Max 90 125 80

Units ° C/W ° C/W ° C/W

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AO3402
30V N-Channel MOSFET

Electrical Characteristics (TJ=25° unless otherwise noted) C Symbol Parameter Conditions ID=250?A, VGS=0V VDS=24V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS ID=250?A VGS=4.5V, VDS=5V VGS=10V, ID=4A RDS(ON) Static Drain-Source On-Resistance C TJ=125° VGS=4.5V, ID=3A VGS=2.5V, ID=2A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=4A IS=1A,VGS=0V 0.6 10 45 66 55 83 8 0.8 1 2.5 390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54.5 41 3 4.34 VGS=4.5V, VDS=15V, ID=4A 0.6 1.38 3.3 VGS=10V, VDS=15V, RL=3.75?, RGEN=6? IF=4A, dI/dt=100A/?s 1 21.7 2.1 12 6.3 55 80 70 110 1 Min 30 1 5 100 1.4 Typ Max Units V ?A nA V A m? m? m? S V A pF pF pF ? nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/?s

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 ?s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : Jan 2008

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AO3402
30V N-Channel MOSFET

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10V 12 4.5V 9 ID (A) 2.5V 6 ID(A) 6 3V 8 VDS=5V 10

4

125°C

3 VGS=2V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics

2 25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics

150 125 VGS=2.5V RDS(ON) (m?) ? 100 75 VGS=4.5V 50 25 0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V Normalized On-Resistance

1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature

VGS=4.5V VGS=10V

VGS=2.5V

200

1.0E+01 1.0E+00

150 RDS(ON) (m?) ?

ID=2A IS (A)

1.0E-01 1.0E-02 1.0E-03 1.0E-04

125°C

100 125°C 50 25°C 0 0 2 4 6 8 10

25°C

1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics

VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

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AO3402
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=15V ID=4A 4 Capacitance (pF) VGS (Volts) 600 500 Ciss 400 300 200 100 0 0 1 2 3 4 5 0 10 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss

3

2

1

0

100.0 TJ(Max)=150°C TA=25°C 10.0 RDS(ON) limited 10?s Power (W)

20 TJ(Max)=150°C TA=25°C 15

ID (Amps)

100?s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 10ms 0.1s

10

5

0 0.001 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 0.1

10 Zθ JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.1

PD Ton Single Pulse

T

0.01 0.00001 0.0001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 100 1000

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