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Bulletin I27131 rev. G 10/02

THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
Features
High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage

IRK.41, .56 SERIES
ADD-A-pakTM GEN V Power Modules

Benefits
Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded

45 A 60 A

Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads.

The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.

Major Ratings and Characteristics

Parameters IT(AV) or IF(AV)
@ 85°C

IRK.41 45

IRK.56 60

IO(RMS) (*)
ITSM @ 50Hz IFSM @ 60Hz I2t @ 50Hz

100 850 890 3.61

135 1310 1370 8.50

@ 60Hz I2√t VRRM range TSTG TJ (*) As AC switch.

3.30 36.1

7.82 85.0

400 to 1600

- 40 to 125

- 40 to125

Units
A
A A A KA2s KA2s KA2√s V oC oC

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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02

ELECTRICAL SPECIFICATIONS Voltage Ratings

Type number

Voltage Code
-

VRRM , maximum repetitive
peak reverse voltage
V

VRSM , maximum VDRM , max. repetitive non-repetitive peak off-state voltage,

peak reverse voltage gate open circuit

V

V

04

400

500

400

06

600

700

600

08

800

900

800

IRK.41/ .56

10

1000

1100

1000

12

1200

1300

1200

14

1400

1500

1400

16

1600

1700

1600

IRRM IDRM 125°C mA
15

On-state Conduction

Parameters

IRK.41

IRK.56

Units Conditions

IT(AV) Max. average on-state current (Thyristors)

IF(AV) Maximum average forward current (Diodes)

IO(RMS)

Max. continuous RMS on-state current.

As AC switch

ITSM Max. peak, one cycle or non-repetitive on-state

IFSM or forward current

I2t Max. I2t for fusing

I2√t Max. I2√t for fusing (1)

45 45
100
850 890 715 750 940 985 3.61 3.30 2.56 2.33 4.42 4.03 36.1

60 60
135
1310 1370 1100 1150 1450 1520 8.56 7.82 6.05 5.53 10.05 9.60 85.6

180o conduction, half sine wave, TC = 85oC

A
KA2s KA2√s

or I(RMS)

I(RMS)

t=10ms No voltage t=8.3ms reapplied t=10ms 100% VRRM t=8.3ms reapplied

Sinusoidal half wave,
Initial TJ = TJ max.

t=10ms TJ = 25oC, t=8.3ms no voltage reapplied

t=10ms No voltage

t=8.3ms reapplied
t=10ms 100% VRRM t=8.3ms reapplied

Initial TJ = TJ max.

t=10ms TJ = 25oC, t=8.3ms no voltage reapplied

t=0.1 to 10ms, no voltage reapplied

VT(TO) Max. value of threshold voltage (2)

rt

Max. value of on-state

slope resistance (2)

VTM Max. peak on-state or

VFM forward voltage

di/dt Max. non-repetitive rate

of rise of turned on

current

IH Max. holding current

IL

Max. latching current

0.88 0.91 5.90 5.74
1.81

0.85 0.88 3.53 3.41
1.54

150
200 400

V m? V A/?s mA

Low level (3) High level (4)

TJ = TJ max

Low level (3) High level (4)

TJ = TJ max

ITM = π x IT(AV) IFM = π x IF(AV)

TJ = 25°C

TJ = 25oC, from 0.67 VDRM,
ITM =π x , IT(AV) Ig = 500mA,

tr < 0.5 ?s, tp > 6 ?s

TJ = 25oC, anode supply = 6V, resistive load, gate open circuit

TJ = 25oC, anode supply = 6V,resistive load

(1) I2t for time tx = I2√t x √tx (4) I > π x IAV

(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2

(3) 16.7% x π x IAV < I < π x IAV

2

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Triggering

IRK.41, .56 Series
Bulletin I27131 rev. G 10/02

Parameters

PGM Max. peak gate power

PG(AV) Max. average gate power

IGM -VGM

Max. peak gate current Max. peak negative gate voltage

VGT Max. gate voltage required to trigger

IGT Max. gate current required to trigger
VGD Max. gate voltage that will not trigger
IGD Max. gate current that will not trigger
Blocking

IRK.41 10 2.5 2.5

IRK.56 10 2.5 2.5

10
4.0 2.5 1.7 270 150 80
0.25

6

Units W A

Conditions

V

TJ = - 40°C

Anode supply = 6V

TJ = 25°C TJ = 125°C

resistive load

TJ = - 40°C

Anode supply = 6V

mA

TJ = 25°C

resistive load

TJ = 125°C

V

TJ = 125oC, rated VDRM applied

mA

TJ = 125oC, rated VDRM applied

Parameters

IRK.41

IRK.56

Units

Conditions

IRRM Max. peak reverse and

IDRM off-state leakage current

15

mA

at VRRM, VDRM

2500 (1 min)

VINS RMS isolation voltage

3500 (1 sec)

V

dv/dt Max. critical rate of rise 500
of off-state voltage (5)

V/?s

(5) Available with dv/dt = 1000V/?s, to complete code add S90 i.e. IRKT41/16AS90.

Thermal and Mechanical Specifications

TJ = 125 oC, gate open circuit
50 Hz, circuit to base, all terminals shorted TJ = 125oC, linear to 0.67 VDRM, gate open circuit

Parameters

IRK.41

IRK.56

Units

Conditions

TJ Junction operating temperature range

Tstg RthJC

Storage temp. range Max. internal thermal resistance, junction

to case

RthCS Typical thermal resistance case to heatsink

T Mounting torque ± 10%

to heatsink

busbar

wt Approximate weight

- 40 to 125 - 40 to 125

0.23

0.20

0.1
5 3 110 (4)

°C

K/W

Per module, DC operation Mounting surface flat, smooth and greased

Nm gr (oz)

A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound

Case style

TO-240AA

JEDEC

?R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

Devices
IRK.41 IRK.56

180o 0.11 0.09

Sine half wave conduction

120o 0.13 0.11

90o 0.17 0.13

60o 0.23 0.18

30o 0.34 0.27

Rect. wave conduction

180o 0.09 0.07

120o 0.14 0.11

90o 0.18 0.14

60o 0.23 0.19

30o 0.34 0.28

Units °C/W

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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Ordering Information Table
Device Code
IRK T 56 / 16 A S90

IRK.57 types With no auxiliary cathode

123

4 56

1 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: S90 = dv/dt 1000 V/?s
No letter = dv/dt 500 V?s

Outline Table

* * Available with no auxiliary cathode. To specify change: 41 to 42 56 to 57 e.g. : IRKT57/16A etc.

IRKT
(1) ~

Dimensions are in millimeters and [inches]

IRKH

IRKL

(1)

(1)

~

~

IRKN
(1) -

+

+

+

+

(2)

(2)

(2)

(2)

(3)

G1 K1 (4) (5)

K2 G2 (7) (6)

(3)
G1 K1 (4) (5)

(3)
K2 G2 (7) (6)

NOTE: To order the Optional Hardware see Bulletin I27900 4

+ (3) G1 K1 (4) (5)
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Maximum Allowable Case Temperature (°C)

130 IRK.41.. Series R thJC (DC) = 0.46 K/W
120

Maximum Average On-state Power Loss (W)

110 Conduction Angle

100

30° 60° 90° 120°

90

180°

80

0

10

20

30

40

50

Average On-state Current (A) Fig. 1 - Current Ratings Characteristics

70

60

180°

120°

90°

50

60°

30°

40

RMS Limit

30 Conduction Angle

20

IRK.41.. Series

10

Per Junction

T J = 125°C

0

0

10

20

30

40

50

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

800 At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.

700

Initial TJ = 125°C @ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

600

Peak Half Sine Wave On-state Current (A)

500

400

IRK.41.. Series

Per Junction

300

1

10

100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

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Peak Half Sine Wave On-state Current (A)

Maximum Average On-state Power Loss (W)

Maximum Allowable Case Temperature (°C)

IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
130 IRK.41.. Series R thJC (DC) = 0.46 K/W
120

110 Conduction Period

30° 100
60°

90°

90

120°

180°

DC 80

0

20

40

60

80

Average On-state Current (A) Fig. 2 - Current Ratings Characteristics

100

DC

180°

80 120°

90°

60°

60

30°

RMS Limit

40 Conduction Period

20

IRK.41.. Series Per Junction

T J = 125°C

0

0

20

40

60

80

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

900 Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

800 Of Conduction May Not Be Maintained.

Initial T J= 125°C

No Voltage Reapplied

700

Rated V RRMReapplied

600

500

400 IRK.41.. Series

Per Junction

300

0.01

0.1

1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02

Maximum Total On-state Power Loss (W)

R thSA = 0.1 K/W - Delta R
0.3 K/W 0.5 K/W 0.7 K/W 1 K/W

140

180°

120

120°

90°

60°

100

30°

80

1.5 K/W

60
Conduction Angle 40
20

2 K/W

IRK.41.. Series Per Module T J = 125°C

3 K/W 5 K/W

0

0

20

40

60

80

100 20 40 60 80 100 120 140

Total RMS Output Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 7 - On-state Power Loss Characteristics

350 300 250 200 150 100
50 0 0

= 0.1 K/W - Delta R R thSA
0.2 K/W

180° (Sine) 180° (Rect)
2 x IRK.41.. Series Single Phase Bridge
Connected T J = 125°C

0.3 K/W
0.5 K/W 0.7 K/W 1 K/W 1.5 K/W

20

40

60

80

Total Output Current (A)

100 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C)

Fig. 8 - On-state Power Loss Characteristics

Maximum Total Power Loss (W)

Maximum Total Power Loss (W)

500 450 400 350 300 250 200 150 100
50 0 0

0.2 K/W

120° (Rect)

0.3 K/W

3 x IRK.41.. Series Three Phase Bridge
Connected T J = 125°C

0.5 K/W 0.7 K/W
1 K/W

20 40 60 80 100 120 1040 20 40 60 80 100 120 140

Total Output Current (A)

Maximum Allowable Ambient Temperature (°C)

= 0.1 K/W - Delta R R thSA

Fig. 9 - On-state Power Loss Characteristics

6

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Maximum Allowable Case Temperature (°C)

130

IRK.56.. Series

120

R thJC (DC) = 0.40 K/W

110
Conduction Angle 100

90

30°

60°

80

90° 120°

180°

70 0 10 20 30 40 50 60 70
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics

Maximum Average On-state Power Loss (W)

90

180°

80

120°

90°

70

60°

60

30°

50

RMS Limit

40

30

Conduction Angle

20

IRK.56.. Series

10

Per Junction T J = 125°C

0

0 10 20 30 40 50 60

Average On-state Current (A)

Fig. 12 - On-state Power Loss Characteristics

Peak Half Sine Wave On-state Current (A)

1200 1100 1000

At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

900

800

700

600 IRK.56.. Series

Per Junction

500

1

10

100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 14 - Maximum Non-Repetitive Surge Current

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Peak Half Sine Wave On-state Current (A)

Maximum Average On-state Power Loss (W)

Maximum Allowable Case Temperature (°C)

IRK.41, .56 Series
Bulletin I27131 rev. G 10/02

130 IRK.56.. Series R thJC(DC) = 0.40 K/W
120

110 Conduction Period
100

90

90°

80

60° 30°

120° 180°

DC

70

0

20

40

60

80 100

Average On-state Current (A)

Fig. 11 - Current Ratings Characteristics

120

DC

180°

100

120°

90°

80

60° 30°

60 RMS Limit
40 20

Conduction Period
IRK.56.. Series Per Junction T J = 125°C

0

0

20

40

60

80

100

Average On-state Current (A)

Fig. 13 - On-state Power Loss Characteristics

1400 1200 1000

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained. Initial TJ= 125°C
No Voltage Reapplied Rated V RRMReapplied

800

600

IRK.56.. Series

Per Junction

400

0.01

0.1

1

Pulse Train Duration (s)

Fig. 15 - Maximum Non-Repetitive Surge Current

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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02

Maximum Total On-state Power Loss (W)

200

= 0.1 K/W - Delta R R thSA

0.2 K/W

0.3

K/W 0.4 K/W

180

180°

120°

160 140 120

90° 60°

0.5 K/W

30°

0.7 K/W

100

1 K/W

80 Conduction Angle
60

1.5 K/W 2 K/W

40

IRK.56.. Series Per Module

4 K/W

20

T J = 125°C

0 0 20 40 60 80 100 120 1400 20 40 60 80 100 120 140

Total RMS Output Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 16 - On-state Power Loss Characteristics

Maximum Total Power Loss (W)

450 400 350 300 250 200 150 100
50 0 0

180° (Sine) 180° (Rect)
2 x IRK.56.. Series Single Phase Bridge
Connected T J = 125°C

0.2 K/W
0.3 K/W
0.5 K/W 0.7 K/W 1 K/W
2 K/W

20 40 60 80 100 120 1400 20 40 60 80 100 120 140

Total Output Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 17 - On-state Power Loss Characteristics

- Delta R = 0.1 K/W R thSA

600

Maximum Total Power Loss (W)

- Delta R = 0.1 K/W R thSA

500

400

0.2 K/W

120°

300

(Rect)

0.3 K/W

200

0.5 K/W

3 x IRK.56.. Series Three Phase Bridge

0.7 K/W

100

Connected T J = 125°C

1 K/W

0 0 20 40 60 80 100 120 140 160 1800 20 40 60 80 100 120 140

Total Output Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 18 - On-state Power Loss Characteristics

8

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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02

1000

1000

Instantaneous On-state Current (A)

Instantaneous On-state Current (A)

Maximum Reverse Recovery Charge - Qrr (?C)

100

100

T J= 25°C

10

T J= 125°C

IRK.41.. Series Per Junction
1 01234567
Instantaneous On-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics

500 IRK.41.. Series
450 IRK.56.. Series TJ = 125 °C
400

I TM = 200 A 100 A

350 50 A
300

250

20 A

200 10 A
150

100 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/?s)
Fig. 21 - Recovery Charge Characteristics

1
Steady State Value: R thJC= 0.46 K/W R thJC= 0.40 K/W (DC Operation)

0.1

Maximum Reverse Recovery Current - Irr (A)

TJ = 25°C

10

TJ = 125°C

IRK.56.. Series Per Junction
1 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous On-state Voltage (V)
Fig. 20 - On-state Voltage Drop Characteristics

110 I TM = 200 A
100 100 A

90

50 A

80

20 A

70

10 A

60

50

IRK.41.. Series

IRK.56.. Series

40

T J = 125 °C

30 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/?s)
Fig. 22 - Recovery Current Characteristics

IRK.41.. Series IRK.56.. Series

Transient Thermal Impedance Z thJC (K/W)

Per Junction

0.01

0.001

0.01

0.1

1

10

Square Wave Pulse Duration (s)

Fig. 23 - Thermal Impedance ZthJC Characteristics

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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
100 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 ?s, tp >= 6 ?s b)Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms
10 tr = 1 ?s, tp >= 6 ?s (a)
(b)

(1) PGM = 100 W, tp = 500 ?s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms

Instantaneous Gate Voltage (V)

TJ = -40 °C TJ = 25 °C TJ = 125 °C

1

0.1 0.001

VGD IGD
0.01

(4) (3) (2) (1)

IRK.41../.56.. Series Frequency Limited by PG(AV)

0.1

1

10

100

1000

Instantaneous Gate Current (A)

Fig. 24 - Gate Characteristics

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02

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