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AO3402


Rev 2: Nov 2004

AO3402, AO3402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package.

Features
VDS (V) = 30V ID = 4 A RDS(ON) < 55m? (VGS = 10V) RDS(ON) < 70m? (VGS = 4.5V) RDS(ON) < 110m? (VGS = 2.5V)

TO-236 (SOT-23) Top View G D S G

D

S

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG

Maximum 30 ±12 4 3.4 15 1.4 1 -55 to 150

Units V V A

W °C

Symbol
A A

t ≤ 10s Steady-State Steady-State

RθJA RθJL

Typ 70 100 63

Max 90 125 80

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO3402, AO3402L

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250?A, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250?A VGS=4.5V, VDS=5V VGS=10V, ID=4A TJ=125°C 0.6 10 1 45 66 55 83 8 0.8 Min 30 1 5 100 1.4 55 80 70 110 1 2.5 390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54.5 41 3 4.34 VGS=4.5V, VDS=15V, ID=4A 0.6 1.38 3.3 1 21.7 2.1 12 6.3 Typ Max Units V ?A nA V A m? m? m? S V A pF pF pF ? nC nC nC ns ns ns ns ns nC

Static Drain-Source On-Resistance

gFS VSD IS

VGS=4.5V, ID=3A VGS=2.5V, ID=2A VDS=5V, ID=4A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time

VGS=10V, VDS=15V, RL=3.75?, RGEN=6?

IF=4A, dI/dt=100A/?s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/?s

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 ?s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO3402, AO3402L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 12 4.5V 9 ID (A) 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 125 VGS=2.5V RDS(ON) (m?) 100 75 50 25 0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 1.0E+01 1.0E+00 150 RDS(ON) (m?) ID=2A IS (A) 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 100 125°C VGS=4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 2.5V ID(A) 6 4 125°C VGS=2V 2 0 0 0.5 1 1.5 25°C 2 2.5 3 3.5 10 10V 3V 8 VDS=5V

VGS(Volts) Figure 2: Transfer Characteristics

VGS=4.5V VGS=10V

VGS=2.5V

VGS=10V

50

Alpha & Omega Semiconductor, Ltd.

AO3402, AO3402L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 600 VDS=15V ID=4A Capacitance (pF) 500 Ciss 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss

100.0

TJ(Max)=150°C TA=25°C

20 TJ(Max)=150°C TA=25°C 100?s 1ms 0.1s 10ms 10?s Power (W) 100 15

10.0 ID (Amps)

RDS(ON) limited

10

1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10

5

0 0.001

0.01

0.1

1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZθJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.1

PD Ton Single Pulse

T

0.01 0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.


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