当前位置:首页 >> 信息与通信 >>

AO3402


AO3402
30V N-Channel MOSFET

General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 4A < 52m? < 65m? < 85m?

SOT23 Top View Bottom View

D

D

D

S G S

G

G S

Absolute Maximum Ratings TA=25° unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
B C

Maximum 30 ±12 4 3.2 15 1.4 0.9 -55 to 150

Units V V A

VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG

W ° C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead

Symbol
t ≤ 10s Steady-State Steady-State

RθJA RθJL

Typ 70 100 63

Max 90 125 80

Units ° C/W ° C/W ° C/W

Rev 6: Jan. 2011

www.aosmd.com

Page 1 of 5

AO3402

Electrical Characteristics (TJ=25° unless otherwise noted) C Symbol Parameter Conditions ID=250?A, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS ID=250?A VGS=10V, VDS=5V VGS=10V, ID=4A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=4.5V, ID=3A VGS=2.5V, ID=2A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=3.6A IS=1A,VGS=0V 0.5 15 43 70 47 60 14 0.75 1 1.5 185 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 25 10 2.1 235 35 18 4.3 10 VGS=10V, VDS=15V, ID=4A 4.7 0.95 1.6 3.5 VGS=10V, VDS=15V, RL=3.75?, RGEN=3? IF=4A, dI/dt=100A/?s 1.5 17.5 2.5 8.5 2.6 11 3.5 285 45 25 6.5 12 52 84 65 85 1 Min 30 1 5 ±100 1.5 Typ Max Units V ?A nA V A m? m? m? S V A pF pF pF ? nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/?s

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300?s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 6: Jan. 2011

www.aosmd.com

Page 2 of 5

AO3402

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10V 3V 12 4.5V 9 ID (A) ID(A) 6 2.5V 8 10 VDS=5V

6 VGS=2.0V 3

4

125°C

2

25°C

0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 70 RDS(ON) (m?) ? 60 VGS=4.5V 50 40 30 0 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 VGS=2.5V Normalized On-Resistance

0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E)

1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 VGS=2.5V ID=2A VGS=4.5V ID=3A VGS=10V 17 ID=4A

5 2 10

VGS=10V

0 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)

120 ID=4A

1.0E+02 1.0E+01

100 RDS(ON) (m?) ? 125°C

1.0E+00 IS (A) 80 1.0E-01 1.0E-02 1.0E-03 40 25°C 1.0E-04 1.0E-05 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25°C 125°C

40

60

20

Rev 6: Jan. 2011

www.aosmd.com

Page 3 of 5

AO3402

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=4A 8 300 Capacitance (pF) VGS (Volts) 6 250 200 150 100 2 50 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 0 Crss 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 Coss Ciss 400 350

4

100.0

10000 TA=25°C

10.0

1000

ID (Amps)

100?s 1ms 10ms

Power (W)

RDS(ON) limited
1.0

10?s

100

0.1

TJ(Max)=150°C TA=25°C

10

10s DC
1 0.00001 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

0.0 0.01 0.1 1 VDS (Volts) 10

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10 Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=125°C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01 Single Pulse

PD Ton

T 10 100 1000

0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 6: Jan. 2011

www.aosmd.com

Page 4 of 5

AO3402

Gate Charge Test Circuit & Waveform
Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL V ds Vds

Vgs Rg

DUT

+
VDC

90 % Vdd 1 0% V gs

t d (o n ) to n tr t d (o ff) t o ff tf

Vgs

D iode R ecovery T est C ircuit & W aveform s
V ds + DUT V gs
t rr

Q rr = -

Idt

V ds -

Isd V gs

L

Isd

IF

dI/dt I RM V dd

+
VD C

V dd V ds

Ig

-

Rev 6: Jan. 2011

www.aosmd.com

Page 5 of 5


相关文章:
更多相关标签: