当前位置:首页 >> 电子/电路 >>

PMEG2005AELD,315;中文规格书,Datasheet资料


PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
Rev. 1 — 10 May 2011 Product data sheet

1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

1.2 Features and benefits
? ? ? ? Forward current: IF ≤ 0.5 A Reverse voltage: VR ≤ 20 V Low forward voltage: VF ≤ 440 mV Ultra small and leadless SMD plastic package ? AEC-Q101 qualified ? Solderable side pads ? Package height typ. 0.37 mm

1.3 Applications
? ? ? ? ? ? Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Ultra high-speed switching

1.4 Quick reference data
Table 1. IF(AV) Quick reference data Conditions square wave; δ = 0.5; f = 20 kHz Tamb ≤ 85 °C Tsp ≤ 130 °C IR VR VF
[1] [2]
[1]

Symbol Parameter average forward current

Min [2]

Typ 300 365

Max 0.5 0.5 600 20 440

Unit A A μA V mV

reverse current reverse voltage forward voltage

VR = 10 V IF = 500 mA

-

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

2. Pinning information
Table 2. Pin 1 2 Pinning Description cathode anode
[1]

Simplified outline

Graphic symbol
1 2
sym001

1

2

Transparent top view

[1]

The marking bar indicates the cathode.

3. Ordering information
Table 3. Ordering information Package Name PMEG2005AELD Description leadless ultra small plastic package; 2 terminals; body 1 × 0.6 × 0.4 mm Version SOD882D Type number

4. Marking
Table 4. Marking codes Marking code[1] 1001 0000 Type number PMEG2005AELD
[1]

For SOD882D binary marking code description, see Figure 1.

4.1 Binary marking code description
CATHODE BAR READING DIRECTION VENDOR CODE

READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION

006aac477

Fig 1.

SOD882D binary marking code description

PMEG2005AELD

All information provided in this document is subject to legal disclaimers.

? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

2 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF(AV) Parameter reverse voltage average forward current square wave; δ = 0.5; f = 20 kHz Tamb ≤ 85 °C Tsp ≤ 130 °C IFRM IFSM Ptot repetitive peak forward current non-repetitive peak forward current total power dissipation tp ≤ 1 ms; δ ≤ 0.25 square wave; tp = 8 ms Tamb ≤ 25 °C
[2] [1]

Conditions

Min -

Max 20

Unit V

?55 ?65

0.5 0.5 2.5 3 340 660 1000 150 +150 +150

A A A A mW mW mW °C °C °C

[3] [1] [4]

Tj Tamb Tstg
[1] [2] [3] [4]

junction temperature ambient temperature storage temperature
Tj = 25 °C prior to surge.

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on a ceramic PCB, Al2O3, standard footprint.

PMEG2005AELD

All information provided in this document is subject to legal disclaimers.

? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

3 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1][2] [1][3] [1][4]

Min -

Typ -

Max 370 190 125 50

Unit K/W K/W K/W K/W

Rth(j-sp)
[1] [2] [3] [4] [5]

thermal resistance from junction to solder point

[5]

For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab.

103

006aac557

duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 0.33 102 0.25 0.1 0.2 0.05

0

0.02 0.01

10 10–3

10–2

10–1

1

10

102 tp (s)

103

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMEG2005AELD

All information provided in this document is subject to legal disclaimers.

? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

4 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

103

006aac558

Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 0 0.05 0.02 0.01 0.75 0.33 0.2

10 10–3

10–2

10–1

1

10

102 tp (s)

103

FR4 PCB, mounting pad for cathode 1 cm2

Fig 3.
103

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac559

Zth(j-a) (K/W)

102

duty cycle = 1 0.75 0.5 0.33 0.1 0.05 0.02 0.01 0 0.25 0.2

10 10–3

10–2

10–1

1

10

102 tp (s)

103

Ceramic PCB, Al2O3, standard footprint

Fig 4.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMEG2005AELD

All information provided in this document is subject to legal disclaimers.

? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

5 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

7. Characteristics
Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF Parameter forward voltage IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IR Cd trr
[1] [2]

Conditions
[1]

Min [2]

Typ 20 65 125 210 365 300 500 19 6

Max 60 110 190 290 440 600 1500 25 -

Unit mV mV mV mV mV μA μA pF ns

reverse current diode capacitance reverse recovery time
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

VR = 10 V VR = 20 V VR = 1 V; f = 1 MHz

-

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

10 IF (A) 1
(1) (2)

006aac560

1 IR (A) 10–1 10–2 10–3

006aac561 (1)

(2) (3)

10–1
(3) (4) (5)

(4)

10–2

10–4 10–5

10–3 10–6 10–4 0 0.2 0.4 0.6 VF (V) 0.8 10–7 0 5

(5)

10

15 VR (V)

20

(1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = ?40 °C

(1) Tj = 150 °C (2) Tj = 125 °C (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = ?40 °C

Fig 5.

Forward current as a function of forward voltage; typical values

Fig 6.

Reverse current as a function of reverse voltage; typical values

PMEG2005AELD

All information provided in this document is subject to legal disclaimers.

? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

6 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

30 Cd (pF) 20

006aac562

10

0 0 5 10 15 VR (V) 20

f = 1 MHz; Tamb = 25 °C

Fig 7.
0.4 PF(AV) (W) 0.3

Diode capacitance as a function of reverse voltage; typical values
006aac563

1.5 PR(AV) (W) 1.0

006aac564

(4) (3) (2) (1)

0.2

(1) (2) (3)

0.5 0.1

(4)

0.0 0.00

0.0 0.25 0.50 IF(AV) (A) 0.75 0 2 4 6 8 VR (V) 10

Tj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1

Tj = 125 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5

Fig 8.

Average forward power dissipation as a function of average forward current; typical values

Fig 9.

Average reverse power dissipation as a function of reverse voltage; typical values

PMEG2005AELD

All information provided in this document is subject to legal disclaimers.

? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

7 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

0.75
(1)

006aac565

0.75
(1)

006aac566

IF(AV) (A)
(2)

IF(AV) (A)
(2)

0.50

0.50

(3) (4)

(3) (4)

0.25

0.25

0.00 0 25 50 75 100 125 150 175 Tamb (°C)

0.00 0 25 50 75 100 125 150 175 Tamb (°C)

FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz

FR4 PCB, mounting pad for cathode 1 cm2 Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz

Fig 10. Average forward current as a function of ambient temperature; typical values
0.75
(1) 006aac567

Fig 11. Average forward current as a function of ambient temperature; typical values
0.75
(1) 006aac568

IF(AV) (A)
(2)

IF(AV) (A)
(2)

0.50

0.50

(3) (4)

(3) (4)

0.25

0.25

0.00 0 25 50 75 100 125 150 175 Tamb (°C)

0.00 0 25 50 75 100 125 150 175 Tsp (°C)

Ceramic PCB, Al2O3, standard footprint Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz

Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz

Fig 12. Average forward current as a function of ambient temperature; typical values
PMEG2005AELD

Fig 13. Average forward current as a function of solder point temperature; typical values
? NXP B.V. 2011. All rights reserved.

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 10 May 2011

8 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

8. Test information

tr D.U.T. RS = 50 Ω V = VR + IF × RS IF SAMPLING OSCILLOSCOPE Ri = 50 Ω VR
mga881

tp t

10 % + IF trr t

90 % input signal output signal

(1)

(1) IR = 1 mA

Fig 14. Reverse recovery time test circuit and waveforms

P t2 t1

duty cycle δ =

t1 t2

t
006aaa812

Fig 15. Duty cycle definition

The current ratings for the typical waveforms as shown in Figure 10, 11, 12 and 13 are calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current.

8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

PMEG2005AELD

All information provided in this document is subject to legal disclaimers.

? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

9 of 14

http://oneic.com/

NXP Semiconductors

PMEG2005AELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier

9. Package outline

0.65 0.55 0.30 0.22 2

0.4 max

0.65 0.30 0.22 1

1.05 0.95

0.55 0.45 Dimensions in mm

cathode marking on top side 10-08-06

Fig 16. Package outline SOD882D

10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMEG2005AELD
[1]

Package SOD882D

Description 2 mm pitch, 8 mm tape and reel

Packing quantity 10000 -315

For further information and the availability of packing methods, see Section 14.

11. Soldering
1.4 0.2

solder lands 0.8 (2×) 0.6 (2×) 0.7 (2×) solder resist solder paste Dimensions in mm 0.3 0.4 1 1.3
sod882d_fr

Reflow soldering is the only recommended soldering method.

Fig 17. Reflow soldering SOD882D
PMEG2005AELD All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 10 May 2011

10 of 14

http://oneic.com/

分销商库存信息:
NXP PMEG2005AELD,315


相关文章:
更多相关标签: